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A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching

dc.contributor.authorGoubert, L.
dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorClauws, P.
dc.contributor.authorCardon, F.
dc.contributor.authorVan Daele, Peter
dc.date.accessioned2021-09-30T08:19:49Z
dc.date.available2021-09-30T08:19:49Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1898
dc.sourceIIOimport
dc.titleA study of electrically active defects created in p-InP by CH4:H2 reactive ion etching
dc.typeJournal article
dc.contributor.imecauthorVan Daele, Peter
dc.contributor.orcidimecVan Daele, Peter::0000-0003-0557-7741
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1696
dc.source.endpage1699
dc.source.journalJournal of Applied Physics
dc.source.issue4
dc.source.volume82
imec.availabilityPublished - open access


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