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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

dc.contributor.authorGoux, Ludovic
dc.contributor.authorOpsomer, Karl
dc.contributor.authorDegraeve, Robin
dc.contributor.authorMuller, Robert
dc.contributor.authorDetavernier, C
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAltimime, Laith
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-19T13:53:45Z
dc.date.available2021-10-19T13:53:45Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18991
dc.sourceIIOimport
dc.titleInfluence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage53502
dc.source.journalApplied Physics Letters
dc.source.issue5
dc.source.volume99
dc.identifier.urlhttp://link.aip.org/link/?APL/99/053502
imec.availabilityPublished - imec


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