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OFF-state degradation of high-voltage tolerant nLDMOS-SCR ESD devices

dc.contributor.authorGriffoni, Alessio
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorThijs, Steven
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorLinten, Dimitri
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T13:59:10Z
dc.date.available2021-10-19T13:59:10Z
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19008
dc.sourceIIOimport
dc.titleOFF-state degradation of high-voltage tolerant nLDMOS-SCR ESD devices
dc.typeJournal article
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2061
dc.source.endpage2071
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume58
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5764501
imec.availabilityPublished - open access


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