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Quantum-mechanical modeling of NBTI in High-k SiGe MOSFETs

dc.contributor.authorHehenberger, Philipp
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorBaumgartner, O.
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-19T14:12:33Z
dc.date.available2021-10-19T14:12:33Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19054
dc.sourceIIOimport
dc.titleQuantum-mechanical modeling of NBTI in High-k SiGe MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate8/09/2011
dc.source.conferencelocationOsaka Japan
imec.availabilityPublished - imec


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