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dc.contributor.authorHellings, Geert
dc.contributor.authorEneman, Geert
dc.contributor.authorMitard, Jerome
dc.contributor.authorMartens, Koen
dc.contributor.authorWang, Wei-E
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-19T14:13:12Z
dc.date.available2021-10-19T14:13:12Z
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19056
dc.sourceIIOimport
dc.titleA fast and accurate method to study the impact of interface traps on germanium MOS performance
dc.typeJournal article
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage938
dc.source.endpage944
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue4
dc.source.volume58
imec.availabilityPublished - imec


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