dc.contributor.author | Hellings, Geert | |
dc.contributor.author | Mitard, Jerome | |
dc.contributor.author | Krom, Raymond | |
dc.contributor.author | Witters, Liesbeth | |
dc.contributor.author | Eneman, Geert | |
dc.contributor.author | Hikavyy, Andriy | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Bender, Hugo | |
dc.contributor.author | Hoffmann, Thomas Y. | |
dc.contributor.author | De Meyer, Kristin | |
dc.date.accessioned | 2021-10-19T14:13:55Z | |
dc.date.available | 2021-10-19T14:13:55Z | |
dc.date.issued | 2011 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19058 | |
dc.source | IIOimport | |
dc.title | Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Hellings, Geert | |
dc.contributor.imecauthor | Mitard, Jerome | |
dc.contributor.imecauthor | Witters, Liesbeth | |
dc.contributor.imecauthor | Eneman, Geert | |
dc.contributor.imecauthor | Hikavyy, Andriy | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Bender, Hugo | |
dc.contributor.imecauthor | De Meyer, Kristin | |
dc.contributor.orcidimec | Hellings, Geert::0000-0002-5376-2119 | |
dc.contributor.orcidimec | Mitard, Jerome::0000-0002-7422-079X | |
dc.contributor.orcidimec | Eneman, Geert::0000-0002-5849-3384 | |
dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 5 | |
dc.source.endpage | 6 | |
dc.source.conference | Silicon Nanoelectronics Workshop | |
dc.source.conferencedate | 12/06/2011 | |
dc.source.conferencelocation | Kyoto Japan | |
imec.availability | Published - imec | |