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Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain

dc.contributor.authorHellings, Geert
dc.contributor.authorMitard, Jerome
dc.contributor.authorKrom, Raymond
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorEneman, Geert
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorBender, Hugo
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-19T14:13:55Z
dc.date.available2021-10-19T14:13:55Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19058
dc.sourceIIOimport
dc.titleScalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain
dc.typeProceedings paper
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage5
dc.source.endpage6
dc.source.conferenceSilicon Nanoelectronics Workshop
dc.source.conferencedate12/06/2011
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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