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dc.contributor.authorHellings, Geert
dc.contributor.authorRosseel, Erik
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRadisic, Dunja
dc.contributor.authorPetersen, Dirch Hjorth
dc.contributor.authorHansen, Ole
dc.contributor.authorNielsen, Peter Folmer
dc.contributor.authorZschaetzsch, Gerd
dc.contributor.authorNazir, Aftab
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-19T14:14:38Z
dc.date.available2021-10-19T14:14:38Z
dc.date.issued2011
dc.identifier.issn1099-0062
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19060
dc.sourceIIOimport
dc.titleUltra shallow arsenic junctions in germanium formed by millisecond laser annealing
dc.typeJournal article
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRadisic, Dunja
dc.contributor.imecauthorNazir, Aftab
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpageH39
dc.source.endpageH41
dc.source.journalElectrochemical and Solid-State Letters
dc.source.issue1
dc.source.volume14
imec.availabilityPublished - imec


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