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Selective epitaxial growth: trends in a modern transistor device fabrication

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVanherle, Wendy
dc.contributor.authorDekoster, Johan
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-19T14:19:57Z
dc.date.available2021-10-19T14:19:57Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19079
dc.sourceIIOimport
dc.titleSelective epitaxial growth: trends in a modern transistor device fabrication
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage455
dc.source.endpage465
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate13/03/2011
dc.source.conferencelocationShanghai China
dc.identifier.urlhttp://www.ecsdl.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=ECSTF8000034000001000455000001&idtype=cvips
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 34; Iss. 1


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