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Low-voltage, low-leakage organic ferroelectric field-effect transistor

dc.contributor.authorKam, Benjamin
dc.contributor.authorMarrani, Alessio
dc.contributor.authorSchols, Sarah
dc.contributor.authorRockele, Maarten
dc.contributor.authorMyny, Kris
dc.contributor.authorSteudel, Soeren
dc.contributor.authorGenoe, Jan
dc.contributor.authorGelinck, Gerwin
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-19T14:43:39Z
dc.date.available2021-10-19T14:43:39Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19156
dc.sourceIIOimport
dc.titleLow-voltage, low-leakage organic ferroelectric field-effect transistor
dc.typeMeeting abstract
dc.contributor.imecauthorKam, Benjamin
dc.contributor.imecauthorSchols, Sarah
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewno
dc.source.beginpageQ5.1
dc.source.conferenceMRS Spring Meeting Symposium Q: New Functional Materials and Emerging Device Architectures for Nonvolatile Memories
dc.source.conferencedate25/04/2011
dc.source.conferencelocationSan Fransisco, CA USA
dc.identifier.urlhttp://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341
imec.availabilityPublished - imec


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