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Technology assessment of through-silicon via by using C-V and C-t Measurements

dc.contributor.authorKatti, Guruprasad
dc.contributor.authorStucchi, Michele
dc.contributor.authorVelenis, Dimitrios
dc.contributor.authorThangaraju, Sarasvathi
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDehaene, Wim
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-19T14:46:03Z
dc.date.available2021-10-19T14:46:03Z
dc.date.issued2011
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19163
dc.sourceIIOimport
dc.titleTechnology assessment of through-silicon via by using C-V and C-t Measurements
dc.typeJournal article
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorVelenis, Dimitrios
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDehaene, Wim
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage946
dc.source.endpage948
dc.source.journalIEEE Electron Device Letters
dc.source.issue7
dc.source.volume32
imec.availabilityPublished - open access


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