dc.contributor.author | Katti, Guruprasad | |
dc.contributor.author | Stucchi, Michele | |
dc.contributor.author | Velenis, Dimitrios | |
dc.contributor.author | Thangaraju, Sarasvathi | |
dc.contributor.author | De Meyer, Kristin | |
dc.contributor.author | Dehaene, Wim | |
dc.contributor.author | Beyne, Eric | |
dc.date.accessioned | 2021-10-19T14:46:03Z | |
dc.date.available | 2021-10-19T14:46:03Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19163 | |
dc.source | IIOimport | |
dc.title | Technology assessment of through-silicon via by using C-V and C-t Measurements | |
dc.type | Journal article | |
dc.contributor.imecauthor | Stucchi, Michele | |
dc.contributor.imecauthor | Velenis, Dimitrios | |
dc.contributor.imecauthor | De Meyer, Kristin | |
dc.contributor.imecauthor | Dehaene, Wim | |
dc.contributor.imecauthor | Beyne, Eric | |
dc.contributor.orcidimec | Beyne, Eric::0000-0002-3096-050X | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 946 | |
dc.source.endpage | 948 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 7 | |
dc.source.volume | 32 | |
imec.availability | Published - open access | |