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Detailed study of the parasitic geometric current components in charge pumping measurements: determination of relevant parameters

dc.contributor.authorHabas, Predrag
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorMaes, Herman
dc.contributor.authorGornik, E.
dc.date.accessioned2021-09-30T08:23:12Z
dc.date.available2021-09-30T08:23:12Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1916
dc.sourceIIOimport
dc.titleDetailed study of the parasitic geometric current components in charge pumping measurements: determination of relevant parameters
dc.typeOral presentation
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceSemiconductor Interface Specialists' Conference - SISC
dc.source.conferencedate4/12/1997
dc.source.conferencelocationCharleston, SC USA
imec.availabilityPublished - open access


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