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Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

dc.contributor.authorKilchytska, V.
dc.contributor.authorAlvarado, J.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorPut, Sofie
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorFlandre, D.
dc.date.accessioned2021-10-19T14:49:35Z
dc.date.available2021-10-19T14:49:35Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19174
dc.sourceIIOimport
dc.titleGate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage18
dc.source.endpage24
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume59
imec.availabilityPublished - imec


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