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Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates

dc.contributor.authorKobayashi, Daisuke
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPut, Sofie
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorPoizat, Marc
dc.contributor.authorHirose, Kazuyuki
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T14:53:47Z
dc.date.available2021-10-19T14:53:47Z
dc.date.issued2011
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19187
dc.sourceIIOimport
dc.titleProton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage800
dc.source.endpage807
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue3
dc.source.volume58
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5720535
imec.availabilityPublished - open access


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