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Indium rich III-nitrides on Germanium by molecular beam epitaxy

dc.contributor.authorLieten, Ruben
dc.contributor.authorTseng, Peter
dc.contributor.authorLeys, Maarten
dc.contributor.authorLocquet, Jean-Pierre
dc.contributor.authorDekoster, Johan
dc.date.accessioned2021-10-19T15:32:04Z
dc.date.available2021-10-19T15:32:04Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19301
dc.sourceIIOimport
dc.titleIndium rich III-nitrides on Germanium by molecular beam epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorDekoster, Johan
dc.identifier.doi10.1557/opl.2011.960
dc.source.peerreviewyes
dc.source.beginpage1324-d01-03
dc.source.conferenceCompound Semiconductors for Energy Applications and Environmental Sustainability
dc.source.conferencedate25/04/2011
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1324


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