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Epitaxial Si, SiGe, and Ge for high-performance devices

dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-19T15:42:47Z
dc.date.available2021-10-19T15:42:47Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19331
dc.sourceIIOimport
dc.titleEpitaxial Si, SiGe, and Ge for high-performance devices
dc.typeOral presentation
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceSeminar at the IHP (Institute fuer Halbleiterphysic) Frankfurt and der Oder
dc.source.conferencedate21/02/2010
dc.source.conferencelocationFrankfurt (Oder) Germany
imec.availabilityPublished - imec


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