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Molecular beam epitaxial growth of 6.1 semiconductors heterostructures for advanced p-type quantum well devices

dc.contributor.authorMerckling, Clement
dc.contributor.authorAlian, AliReza
dc.contributor.authorSun, Xiao
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-19T16:15:22Z
dc.date.available2021-10-19T16:15:22Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19416
dc.sourceIIOimport
dc.titleMolecular beam epitaxial growth of 6.1 semiconductors heterostructures for advanced p-type quantum well devices
dc.typeProceedings paper
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorSun, Xiao
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewno
dc.source.beginpage231
dc.source.endpage241
dc.source.conferencePhysics and Technology of High-k Materials 9
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA MA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 41, Issue 3


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