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dc.contributor.authorMerckling, Clement
dc.contributor.authorChang, Y.C.
dc.contributor.authorLu, C.Y.
dc.contributor.authorPenaud, J.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorScarrozza, Marco
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorKwo, J.
dc.contributor.authorHong, M.
dc.contributor.authorDekoster, Johan
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T16:15:50Z
dc.date.available2021-10-19T16:15:50Z
dc.date.issued2011
dc.identifier.issn0039-6028
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19417
dc.sourceIIOimport
dc.titleDefect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage1778
dc.source.endpage1783
dc.source.journalSurface Science
dc.source.issue19_20
dc.source.volume605
imec.availabilityPublished - imec


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