dc.contributor.author | Merckling, Clement | |
dc.contributor.author | Chang, Y.C. | |
dc.contributor.author | Lu, C.Y. | |
dc.contributor.author | Penaud, J. | |
dc.contributor.author | Brammertz, Guy | |
dc.contributor.author | Scarrozza, Marco | |
dc.contributor.author | Pourtois, Geoffrey | |
dc.contributor.author | Kwo, J. | |
dc.contributor.author | Hong, M. | |
dc.contributor.author | Dekoster, Johan | |
dc.contributor.author | Meuris, Marc | |
dc.contributor.author | Heyns, Marc | |
dc.contributor.author | Caymax, Matty | |
dc.date.accessioned | 2021-10-19T16:15:50Z | |
dc.date.available | 2021-10-19T16:15:50Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 0039-6028 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19417 | |
dc.source | IIOimport | |
dc.title | Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation | |
dc.type | Journal article | |
dc.contributor.imecauthor | Merckling, Clement | |
dc.contributor.imecauthor | Brammertz, Guy | |
dc.contributor.imecauthor | Pourtois, Geoffrey | |
dc.contributor.imecauthor | Dekoster, Johan | |
dc.contributor.imecauthor | Meuris, Marc | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.contributor.imecauthor | Caymax, Matty | |
dc.contributor.orcidimec | Merckling, Clement::0000-0003-3084-2543 | |
dc.contributor.orcidimec | Brammertz, Guy::0000-0003-1404-7339 | |
dc.contributor.orcidimec | Pourtois, Geoffrey::0000-0003-2597-8534 | |
dc.contributor.orcidimec | Meuris, Marc::0000-0002-9580-6810 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1778 | |
dc.source.endpage | 1783 | |
dc.source.journal | Surface Science | |
dc.source.issue | 19_20 | |
dc.source.volume | 605 | |
imec.availability | Published - imec | |