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Improved performance of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer deposition

dc.contributor.authorMolle, Alessandro
dc.contributor.authorLamagna, Luca
dc.contributor.authorWiemer, Claudia
dc.contributor.authorSpiga, Sabina
dc.contributor.authorFanciulli, Marco
dc.contributor.authorMerckling, Clement
dc.contributor.authorBrammertz, Guy
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T16:29:13Z
dc.date.available2021-10-19T16:29:13Z
dc.date.issued2011
dc.identifier.issn1882-0778
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19449
dc.sourceIIOimport
dc.titleImproved performance of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer deposition
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.source.peerreviewyes
dc.source.beginpage94103
dc.source.journalApplied Physics Express
dc.source.issue9
dc.source.volume4
imec.availabilityPublished - imec


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