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Optimization of the hybrid organic/inorganic interface to achieve high mobilities at short channel length for p-type organic thin film transistors with low-cost, gold-free source/drain bottom contacts

dc.contributor.authorMuller, Robert
dc.contributor.authorSmout, Steve
dc.contributor.authorRolin, Cedric
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-19T16:33:19Z
dc.date.available2021-10-19T16:33:19Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19459
dc.sourceIIOimport
dc.titleOptimization of the hybrid organic/inorganic interface to achieve high mobilities at short channel length for p-type organic thin film transistors with low-cost, gold-free source/drain bottom contacts
dc.typeOral presentation
dc.contributor.imecauthorSmout, Steve
dc.contributor.imecauthorRolin, Cedric
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecSmout, Steve::0000-0001-5464-8951
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium CC: Hybrid Interfaces and Devices
dc.source.conferencedate25/04/2011
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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