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Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach

dc.contributor.authorNoda, Taji
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorRosseel, Erik
dc.contributor.authorHellings, Geert
dc.contributor.authorVrancken, Christa
dc.contributor.authorBender, Hugo
dc.contributor.authorHoffmann, T.Y.
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-19T16:45:02Z
dc.date.available2021-10-19T16:45:02Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19489
dc.sourceIIOimport
dc.titleAnalysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach
dc.typeProceedings paper
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage797
dc.source.endpage800
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2011
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access


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