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Transition from metallic to semiconducting behavior in oxygen plasma-treated single-layer graphene

dc.contributor.authorNourbakhsh, Amirhasan
dc.contributor.authorCantoro, Mirco
dc.contributor.authorVosch, Tom
dc.contributor.authorHofkens, johan
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHeyns, Marc
dc.contributor.authorSels, Bert
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-19T16:47:10Z
dc.date.available2021-10-19T16:47:10Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19494
dc.sourceIIOimport
dc.titleTransition from metallic to semiconducting behavior in oxygen plasma-treated single-layer graphene
dc.typeProceedings paper
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage1336-p02-07
dc.source.conferenceInterface Engineering for Post-CMOS Emerging Channel Materials
dc.source.conferencedate25/04/2011
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1336


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