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Interface and border traps in Ge-based gate stacks

dc.contributor.authorNyns, Laura
dc.contributor.authorLin, Dennis
dc.contributor.authorBrammertz, Guy
dc.contributor.authorBellenger, Florence
dc.contributor.authorShi, Xiaoping
dc.contributor.authorSioncke, Sonja
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T16:47:59Z
dc.date.available2021-10-19T16:47:59Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19496
dc.sourceIIOimport
dc.titleInterface and border traps in Ge-based gate stacks
dc.typeProceedings paper
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage465
dc.source.endpage480
dc.source.conferenceDielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
dc.source.conferencedate1/06/2011
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - open access


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