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Ge- and III/V-CMP for integration of high mobility channel materials

dc.contributor.authorOng, Patrick
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorWaldron, Niamh
dc.contributor.authorLeunissen, Peter
dc.date.accessioned2021-10-19T16:54:35Z
dc.date.available2021-10-19T16:54:35Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19513
dc.sourceIIOimport
dc.titleGe- and III/V-CMP for integration of high mobility channel materials
dc.typeProceedings paper
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.source.peerreviewno
dc.source.beginpage647
dc.source.endpage652
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate13/03/2011
dc.source.conferencelocationShanghai China
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 34, Issue 1


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