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dc.contributor.authorOrzali, Tommaso
dc.contributor.authorWang, G.
dc.contributor.authorWaldron, Niamh
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorWang, Wei-E
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T16:58:43Z
dc.date.available2021-10-19T16:58:43Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19523
dc.sourceIIOimport
dc.titleIn-Situ HCl etching of InP in shallow-trench-isolated structures
dc.typeProceedings paper
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage345
dc.source.endpage354
dc.source.conferenceULSI Process Integration 7
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 41, Issue 7


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