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Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

dc.contributor.authorPaul, Abhijeet
dc.contributor.authorTettamanzi, Giuseppe C.
dc.contributor.authorLee, Sunhee
dc.contributor.authorMehrotra, Saumitra
dc.contributor.authorCollaert, Nadine
dc.contributor.authorBiesemans, Serge
dc.contributor.authorRogge, Sven
dc.contributor.authorKlimeck, Gerard
dc.date.accessioned2021-10-19T17:10:55Z
dc.date.available2021-10-19T17:10:55Z
dc.date.issued2011
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19552
dc.sourceIIOimport
dc.titleInterface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.identifier.doi10.1063/1.3660697
dc.source.peerreviewyes
dc.source.beginpage124507
dc.source.journalJournal of Applied Physics
dc.source.issue12
dc.source.volume110
imec.availabilityPublished - open access


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