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Why carrier mobility in diamond is larger than in Si or 4H-SiC

dc.contributor.authorPernot, J.
dc.contributor.authorVolpe, P.N.
dc.contributor.authorGheeraert, E.
dc.contributor.authorBustarret, E.
dc.contributor.authorOmnes, F.
dc.contributor.authorMuret, P.
dc.contributor.authorMortet, V.
dc.contributor.authorHaenen, Ken
dc.contributor.authorTeraji, T.
dc.contributor.authorKoizumi, S.
dc.date.accessioned2021-10-19T17:13:49Z
dc.date.available2021-10-19T17:13:49Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19559
dc.sourceIIOimport
dc.titleWhy carrier mobility in diamond is larger than in Si or 4H-SiC
dc.typeOral presentation
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.source.peerreviewno
dc.source.conference5th International Conference on New Diamond and Nano Carbons - NDNC
dc.source.conferencedate16/05/2011
dc.source.conferencelocationMatsue City Japan
imec.availabilityPublished - imec


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