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Microstructural studies of Co silicide layers formed on SiGe and SiGeC

dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorDonaton, R. A.
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorLangouche, G.
dc.contributor.authorSt. Amour, A.
dc.contributor.authorSturm, J. C.
dc.date.accessioned2021-09-30T08:30:55Z
dc.date.available2021-09-30T08:30:55Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1955
dc.sourceIIOimport
dc.titleMicrostructural studies of Co silicide layers formed on SiGe and SiGeC
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage359
dc.source.endpage364
dc.source.conferenceControl of Semiconductor Surfaces and Interfaces
dc.source.conferencedate2/12/1996
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 448


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