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Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

dc.contributor.authorPoliakov, Pavel
dc.contributor.authorBlomme, Pieter
dc.contributor.authorMiranda Corbalan, Miguel
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDehaene, Wim
dc.date.accessioned2021-10-19T17:24:06Z
dc.date.available2021-10-19T17:24:06Z
dc.date.issued2011-05
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19584
dc.sourceIIOimport
dc.titleCross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness
dc.typeJournal article
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDehaene, Wim
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage919
dc.source.endpage924
dc.source.journalMicroelectronics Reliability
dc.source.issue5
dc.source.volume51
imec.availabilityPublished - imec


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