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Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness
Publication:
Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness
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Date
2011-05
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Poliakov, Pavel
;
Blomme, Pieter
;
Miranda Corbalan, Miguel
;
Van Houdt, Jan
;
Dehaene, Wim
Journal
Microelectronics Reliability
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1958
since deposited on 2021-10-19
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last month
Acq. date: 2026-01-09
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Metrics
Views
1958
since deposited on 2021-10-19
1
last month
Acq. date: 2026-01-09
Citations