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dc.contributor.authorRafi, J.-M.
dc.contributor.authorVanhellemont, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorChen, Jimmy
dc.contributor.authorYang, D.
dc.contributor.authorZabala, M.
dc.contributor.authorChina, E.
dc.contributor.authorLechon, M.
dc.date.accessioned2021-10-19T17:49:52Z
dc.date.available2021-10-19T17:49:52Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19646
dc.sourceIIOimport
dc.titleDiode characteristics and thermal donor formation in germanium-doped silicon substrates
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference26th International Conference on Defects in Semiconductors - ICDS
dc.source.conferencedate18/07/2011
dc.source.conferencelocationChristchurch New Zealand
imec.availabilityPublished - imec


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