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SOI n- and pMuGFET devices with different TiN metal gate tThickness under influence of sidewall crystal orientation

dc.contributor.authorRodrigues, M.
dc.contributor.authorGaleti, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T18:10:55Z
dc.date.available2021-10-19T18:10:55Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19693
dc.sourceIIOimport
dc.titleSOI n- and pMuGFET devices with different TiN metal gate tThickness under influence of sidewall crystal orientation
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage215
dc.source.endpage222
dc.source.conference26th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate30/08/2011
dc.source.conferencelocationJoao Pessoa Brazil
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 39, Issue 1


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