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Ge content and recess depth dependence of the band-to-band tunneling current in Si 1-xGe x/Si hetero-junctions

dc.contributor.authorRodriguez, A.L.
dc.contributor.authorTejada, J.A.J.
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorEneman, Geert
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-19T18:11:46Z
dc.date.available2021-10-19T18:11:46Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19695
dc.sourceIIOimport
dc.titleGe content and recess depth dependence of the band-to-band tunneling current in Si 1-xGe x/Si hetero-junctions
dc.typeProceedings paper
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference8th Spanish Conference on Electron Devices - CDE
dc.source.conferencedate8/02/2011
dc.source.conferencelocationPalma de Mallorca Spain
imec.availabilityPublished - open access


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