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Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling

dc.contributor.authorScalise, Emilio
dc.contributor.authorHoussa, Michel
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorAfanas'ev, Valery
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-19T18:30:01Z
dc.date.available2021-10-19T18:30:01Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19738
dc.sourceIIOimport
dc.titleInelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage132101
dc.source.journalApplied Physics Letters
dc.source.issue13
dc.source.volume99
imec.availabilityPublished - open access


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