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Influence of pulse duration in picosecond laser ablation of silicon nitride layers

dc.contributor.authorSchulz-Ruhtenberg, Malte
dc.contributor.authorTrusheim, Daniel
dc.contributor.authorDas, Jo
dc.contributor.authorKrantz, Stephan
dc.contributor.authorWieduwilt, Jan
dc.date.accessioned2021-10-19T18:37:13Z
dc.date.available2021-10-19T18:37:13Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19754
dc.sourceIIOimport
dc.titleInfluence of pulse duration in picosecond laser ablation of silicon nitride layers
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage614
dc.source.endpage619
dc.source.conferenceProceedings of the Silicon PV conference (1st International Conference on Crystalline Silicon Photovoltaics)
dc.source.conferencedate17/04/2011
dc.source.conferencelocationFreiburg Germany
imec.availabilityPublished - imec
imec.internalnotesEnergy Procedia Vol. 8(2011)


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