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MBE growth and crystalline properties of Ge1-xSnx heteroepitaxial layers

dc.contributor.authorShimura, Y.
dc.contributor.authorNakamura, M.
dc.contributor.authorAsano, T.
dc.contributor.authorTakeuchi, S.
dc.contributor.authorNakatsuka, O.
dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorZaima, S.
dc.date.accessioned2021-10-19T18:45:17Z
dc.date.available2021-10-19T18:45:17Z
dc.date.issued2011-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19772
dc.sourceIIOimport
dc.titleMBE growth and crystalline properties of Ge1-xSnx heteroepitaxial layers
dc.typeMeeting abstract
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceThe 2nd GeSn workshop: GeSn Developments and Future Applications
dc.source.conferencedate2/09/2011
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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