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A DLTS study of SiO2 and SiO2/SiNx surface passivation of silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorGong, Chun
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVan Kerschaver, Emmanuel
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-19T18:52:50Z
dc.date.available2021-10-19T18:52:50Z
dc.date.issued2011
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19787
dc.sourceIIOimport
dc.titleA DLTS study of SiO2 and SiO2/SiNx surface passivation of silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageH612
dc.source.endpageH617
dc.source.journalJournal of the Electrochemical Society
dc.source.issue6
dc.source.volume158
imec.availabilityPublished - open access


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