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A deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states

dc.contributor.authorSimoen, Eddy
dc.contributor.authorRothschild, Aude
dc.contributor.authorVermang, Bart
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-19T18:56:55Z
dc.date.available2021-10-19T18:56:55Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19796
dc.sourceIIOimport
dc.titleA deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVermang, Bart
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecVermang, Bart::0000-0003-2669-2087
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage37
dc.source.endpage44
dc.source.conferencePhotovoltaics for the 21st Century 7
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 41, Issue 4


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