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Atomic layer deposition of Al2O3 on S-passivated Ge

dc.contributor.authorSioncke, Sonja
dc.contributor.authorCeuppens, Joris
dc.contributor.authorLin, Dennis
dc.contributor.authorNyns, Laura
dc.contributor.authorDelabie, Annelies
dc.contributor.authorStruyf, Herbert
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorMuller, Matthias
dc.contributor.authorBeckhoff, Burkhard
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T18:58:19Z
dc.date.available2021-10-19T18:58:19Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19799
dc.sourceIIOimport
dc.titleAtomic layer deposition of Al2O3 on S-passivated Ge
dc.typeJournal article
dc.contributor.imecauthorCeuppens, Joris
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1553
dc.source.endpage1556
dc.source.journalMicroelectronic Engineering
dc.source.issue7
dc.source.volume88
imec.availabilityPublished - open access


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