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S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

dc.contributor.authorSioncke, Sonja
dc.contributor.authorLin, Dennis
dc.contributor.authorNyns, Laura
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDelabie, Annelies
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorRip, Jens
dc.contributor.authorStruyf, Herbert
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorMuller, Matthias
dc.contributor.authorBeckhoff, Burkhard
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T18:59:54Z
dc.date.available2021-10-19T18:59:54Z
dc.date.issued2011
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19802
dc.sourceIIOimport
dc.titleS-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor
dc.typeJournal article
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage84907
dc.source.journalJournal of Applied Physics
dc.source.issue8
dc.source.volume110
imec.availabilityPublished - open access


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