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Junctionless nanowire field effect transistor versus inversion mode devices

dc.contributor.authorSoree, Bart
dc.contributor.authorPham, Anton
dc.contributor.authorSels, Dries
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorMagnus, Wim
dc.date.accessioned2021-10-19T19:05:16Z
dc.date.available2021-10-19T19:05:16Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19814
dc.sourceIIOimport
dc.titleJunctionless nanowire field effect transistor versus inversion mode devices
dc.typeMeeting abstract
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorMagnus, Wim
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.conferenceAPS March meeting
dc.source.conferencedate21/03/2011
dc.source.conferencelocationDallas, TX USA
imec.availabilityPublished - imec
imec.internalnotesD24.00009


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