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Cryogenic to room temperature effects of NBTI in high-k PMOS devices

dc.contributor.authorSouthwick III, Richard G.
dc.contributor.authorPurnell, Shem T.
dc.contributor.authorRapp, Blake A.
dc.contributor.authorThompson, Ryan J.
dc.contributor.authorPugmire, Shane K.
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, Tibor
dc.contributor.authorKnowlton, William B.
dc.date.accessioned2021-10-19T19:06:11Z
dc.date.available2021-10-19T19:06:11Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19816
dc.sourceIIOimport
dc.titleCryogenic to room temperature effects of NBTI in high-k PMOS devices
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.conferenceIEEE International Integrated Reliability Workshop - IIRW
dc.source.conferencedate16/10/2011
dc.source.conferencelocationLake Tahoe, CA USA
imec.availabilityPublished - imec


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