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Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

dc.contributor.authorSrivastava, Puneet
dc.contributor.authorOprins, Herman
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDas, Jo
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorMarcon, Denis
dc.contributor.authorVisalli, Domenica
dc.contributor.authorKang, Xuanwu
dc.contributor.authorLenci, Silvia
dc.contributor.authorGeens, Karen
dc.contributor.authorViaene, John
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-19T19:10:46Z
dc.date.available2021-10-19T19:10:46Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19825
dc.sourceIIOimport
dc.titleSi trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance
dc.typeProceedings paper
dc.contributor.imecauthorOprins, Herman
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecOprins, Herman::0000-0003-0680-4969
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage473
dc.source.endpage476
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2011
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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