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On gated diodes for ESD protection in bulk FinFET CMOS technology

dc.contributor.authorThijs, Steven
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorLinten, Dimitri
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T19:37:47Z
dc.date.available2021-10-19T19:37:47Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19883
dc.sourceIIOimport
dc.titleOn gated diodes for ESD protection in bulk FinFET CMOS technology
dc.typeProceedings paper
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference33rd Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD
dc.source.conferencedate11/09/2011
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - open access


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