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Fast VTH transients after the program/erase of flash memory stacks with high-k dielectrics

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZahid, Mohammed
dc.contributor.authorKaczer, Ben
dc.contributor.authorBlomme, Pieter
dc.contributor.authorKittl, Jorge
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T19:43:06Z
dc.date.available2021-10-19T19:43:06Z
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19895
dc.sourceIIOimport
dc.titleFast VTH transients after the program/erase of flash memory stacks with high-k dielectrics
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage631
dc.source.endpage640
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue3
dc.source.volume58
imec.availabilityPublished - open access


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