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From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGrasser, T.
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T19:43:35Z
dc.date.available2021-10-19T19:43:35Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19896
dc.sourceIIOimport
dc.titleFrom mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage152
dc.source.endpage153
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate13/06/2011
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - open access


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