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Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorFranco, Jacopo
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T19:44:34Z
dc.date.available2021-10-19T19:44:34Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19898
dc.sourceIIOimport
dc.titleDepth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage18306
dc.source.journalApplied Physics Letters
dc.source.issue18
dc.source.volume98
imec.availabilityPublished - open access


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