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Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress
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Authors
Toledano Luque, Maria
;
Kaczer, Ben
;
Roussel, Philippe
;
Franco, Jacopo
;
Ragnarsson, Lars-Ake
;
Grasser, Tibor
;
Groeseneken, Guido
ISSN
0003-6951
Issue
18
Journal
Applied Physics Letters
Volume
98
Title
Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress
Publication type
Journal article
Embargo date
9999-12-31
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