Publication:

Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

Date

2011
Journal article
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dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorFranco, Jacopo
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.accessioned2021-10-19T19:44:34Z
dc.date.available2021-10-19T19:44:34Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19898
dc.source.beginpage18306
dc.source.issue18
dc.source.journalApplied Physics Letters
dc.source.volume98
dc.title

Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

dc.typeJournal article
dspace.entity.typePublication
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