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Stress relaxation empirical model for biaxially strained triple-gate devices

dc.contributor.authorTrevisoli, R.D.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorPavanello, M.A.
dc.date.accessioned2021-10-19T19:52:45Z
dc.date.available2021-10-19T19:52:45Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19914
dc.sourceIIOimport
dc.titleStress relaxation empirical model for biaxially strained triple-gate devices
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage289
dc.source.endpage294
dc.source.conferenceAdvanced Semiconductor-on-Insulator Technology and Related Physics
dc.source.conferencedate1/05/2011
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 35, Iss. 5


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