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Amorphous gallium-indium-zinc oxide based thin film transistors and circuits on foil

dc.contributor.authorTripathi, Ashutosh
dc.contributor.authorNag, Manoj
dc.contributor.authorMyny, Kris
dc.contributor.authorSmits, Edsger
dc.contributor.authorvan der Putten, Bas
dc.contributor.authorvan Neer, Martin
dc.contributor.authorGenoe, Jan
dc.contributor.authorSteudel, Soeren
dc.contributor.authorHeremans, Paul
dc.contributor.authorMeinders, Erwin
dc.contributor.authorGelinck, Gerwin
dc.date.accessioned2021-10-19T19:53:49Z
dc.date.available2021-10-19T19:53:49Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19916
dc.sourceIIOimport
dc.titleAmorphous gallium-indium-zinc oxide based thin film transistors and circuits on foil
dc.typeOral presentation
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewno
dc.source.conferenceMRS Fall Meeting Symposium F: Low-Temperature-Processed Thin-Film Transistors
dc.source.conferencedate29/11/2010
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesF9.3


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